IndiumV3, Russie, Analysis, bibRecord, 000031

Structure of ordered oxide on InAs(100) surface

Identifieur interne : 000031 ( Russie/Analysis ); précédent : 000030; suivant : 000032

Structure of ordered oxide on InAs(100) surface

Auteurs : RBID : Pascal:13-0012011

Descripteurs français

Pascal (Inist)
- Calcul ab initio, Reconstruction surface, Structure surface, Arséniure d'indium, Semiconducteur, As In, InAs, Composé minéral.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Ab initio calculations, Indium arsenides, Inorganic compounds, Semiconductor materials, Surface reconstruction, Surface structure.

Abstract

It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3x1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable In -O- In trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3×1) reconstruction than within the competing (2×1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap.

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Pascal:13-0012011

Le document en format XML

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<front><div type="abstract" xml:lang="en">It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3x1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable In -O- In trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3×1) reconstruction than within the competing (2×1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap.</div>
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   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:13-0012011
   |texte=   Structure of ordered oxide on InAs(100) surface
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Structure of ordered oxide on InAs(100) surface

Structure of ordered oxide on InAs(100) surface

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri